Organic light emitting display apparatus with penetrating portion and method of manufacturing same

ABSTRACT

A display apparatus includes a flexible substrate, a thin-film transistor unit, and a light-emitting unit. The flexible substrate includes a display area has a first area, a peripheral area which is adjacent to the display area, and a first penetrating portion corresponding to the first area. The thin-film transistor unit is in the display area and at least a portion of the peripheral area. The thin-film transistor unit includes a thin-film transistor and an insulation layer and has a second penetrating portion at a location corresponding to the first penetrating portion. The light-emitting unit is on the thin-film transistor unit and includes a pixel electrode, an intermediate layer including an emission layer, and a counter electrode.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2016-0180419, filed on Dec. 27, 2016,and entitled, “Display Apparatus and Method of Manufacturing Same,” isincorporated by reference herein in its entirety.

BACKGROUND 1. Field

One or more embodiments described herein relate to a display apparatusand a method for manufacturing a display apparatus.

2. Description of the Related Art

An organic light-emitting display is a self-emissive device thatexhibits a wide viewing angle, excellent contrast, and fast responsespeed. As a result, these displays are suitable for use in mobilephones, televisions, and other electronic devices.

One type of organic light-emitting display includes a flexible substratemade of synthetic resin. The flexibility of the substrate may make itdifficult to handle during manufacturing. In an attempt to solve thisproblem, the flexible substrate may be placed on rigid supportingsubstrate during manufacturing. The supporting substrate is thenseparated from the flexible substrate at a later time. In order to formsome layers of the flexible substrate, a fine metal mask (FMM) may beused. However, it may not be easy to apply a new design to the displayarea of such a display because of the various layers.

SUMMARY

In accordance with one or more embodiments, a display apparatus includesa flexible substrate including a display area having a first area, aperipheral area adjacent to the display area, and a first penetratingportion corresponding to the first area; a thin-film transistor unit inthe display area and at least a portion of the peripheral area, thethin-film transistor unit including a thin-film transistor and aninsulation layer and having a second penetrating portion at a locationcorresponding to the first penetrating portion; and a light-emittingunit on the thin-film transistor unit and including a pixel electrode,an intermediate layer including an emission layer, and a counterelectrode.

The first penetrating portion and the second penetrating portion mayhave a same inner surface. The display apparatus may include a first damon the thin-film transistor unit and surrounding the second penetratingportion. The first dam may be spaced apart from the second penetratingportion by a predetermined distance. The insulation layer may include atleast one inorganic insulation film, and an inorganic insulation film inthe second area, which is defined by the predetermined distance,includes at least one fine hole.

The display apparatus may include a second dam on an edge of thethin-film transistor unit. The display apparatus may include anencapsulator on the counter electrode and including an organicencapsulation layer, wherein the organic encapsulation layer is betweenthe first dam and the second dam. The display apparatus may include apixel defining film that defines a pixel area by exposing a centerportion of the pixel electrode and covering an edge of the pixelelectrode, wherein the first dam and the second dam include a samematerial as the pixel defining film. At least a portion of the counterelectrode may be on the first dam.

In accordance with one or more other embodiments, a method formanufacturing a display apparatus includes forming a flexible substrateincluding a peripheral area adjacent to a display area on a supportingsubstrate, the display area including a first area and a second areasurrounding an outer area of the first area and being spaced apart fromthe first area by a predetermined distance; forming a thin-filmtransistor unit including a thin-film transistor and an insulation layerin the display area and at least a portion of the peripheral area of theflexible substrate; forming a first dam surrounding the second area;laser-cutting the thin-film transistor unit and the flexible substratealong the first area; forming a light-emitting unit including a pixelelectrode, an intermediate layer including an emission layer, and acounter electrode on the thin-film transistor unit; and forming anencapsulator including an organic encapsulation layer on the counterelectrode.

The method may include forming a pixel defining film on the thin-filmtransistor unit to expose a center portion of the pixel electrode and tosurround an edge of the pixel electrode, wherein the forming of thefirst dam and the forming of the pixel defining film are performedsimultaneously.

The laser-cutting may include forming a first penetrating portion in theflexible substrate; and forming a second penetrating portion in thethin-film transistor unit. The first penetrating portion and the secondpenetrating portion may have a same inner surface. The method mayinclude forming a second dam on the thin-film transistor unit tosurround an edge of the thin-film transistor unit. Forming the first damand forming the second dam may be performed simultaneously. Forming theencapsulator may include forming the organic encapsulation layer betweenthe first dam and second dam.

The method may include attaching a top film to the top of theencapsulator; separating the flexible substrate from the supportingsubstrate; attaching a bottom film to the flexible substrate separatedfrom the supporting substrate; cell-cutting the bottom film and theflexible substrate; removing the bottom film and attaching a protectivefilm to the flexible substrate; and removing the top film. The counterelectrode may be integrally formed on the flexible substrate, and atleast a portion of the counter electrode may be on the first dam.

Forming the encapsulator may include forming an inorganic encapsulationlayer on the organic encapsulation layer, and at least a portion of theinorganic encapsulation layer may be formed on the counter electrode onthe first dam. The insulation layer may include an inorganic insulationfilm, and at least one fine hole may be formed in the inorganicinsulation film in the second area.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIGS. 1A and 1B illustrate an operation in an embodiment of a processfor manufacturing a display apparatus;

FIGS. 2A and 2B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIGS. 3A and 3B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIGS. 4A and 4B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIGS. 5A and 5B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIGS. 6A and 6B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIGS. 7A and 7B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIGS. 8A and 8B illustrate another operation in the embodiment of aprocess for manufacturing a display apparatus;

FIG. 9 illustrates an embodiment of a display area of a displayapparatus; and

FIG. 10 illustrates an embodiment of a portion of a display apparatusadjacent to a penetrating hole.

DETAILED DESCRIPTION

Example embodiments are described with reference to the drawings;however, they may be embodied in different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will convey exemplary implementations to those skilled inthe art. The embodiments (or portions thereof) may be combined to formadditional embodiments

In the drawings, the dimensions of layers and regions may be exaggeratedfor clarity of illustration. It will also be understood that when alayer or element is referred to as being “on” another layer orsubstrate, it can be directly on the other layer or substrate, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being “under” another layer, it canbe directly under, and one or more intervening layers may also bepresent. In addition, it will also be understood that when a layer isreferred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent. Like reference numerals refer to like elements throughout.

When an element is referred to as being “connected” or “coupled” toanother element, it can be directly connected or coupled to the anotherelement or be indirectly connected or coupled to the another elementwith one or more intervening elements interposed therebetween. Inaddition, when an element is referred to as “including” a component,this indicates that the element may further include another componentinstead of excluding another component unless there is differentdisclosure.

FIGS. 1A and 1B illustrate plan and cross-sectional views of anembodiment of a process for manufacturing a display apparatus.

Referring first to FIGS. 1A and 1B, the method includes disposing aflexible substrate 100 on a supporting substrate 10. Since the flexiblesubstrate 100 has a flexible characteristic, it may not be easy for theflexible substrate 100 alone to sufficiently support various layers thatare to be disposed on the flexible substrate 100. Therefore, after theflexible substrate 100 is disposed on the supporting substrate 10 (whichis able to support the flexible substrate 100), various devices andlayers may be disposed on the flexible substrate 100. The supportingsubstrate 10 may include, for example, metal or a glass material with arigidity greater than the flexible substrate 100.

The flexible substrate 100 may include various materials. Examplesinclude metal or plastic material, e.g., polyethylene terephthalate(PET), polyethylenenaphthalate (PEN), polyimide, etc., The flexiblesubstrate 100 may include a non-display area NDA and a display area DA.The display area NDA displays an image and includes light-emittingdevices. The non-display area DA does not display an image and mayinclude, for example, one or more circuits or wires for driving displayof an image in the display area DA.

A sacrificing layer may be between the supporting substrate 10 and theflexible substrate 100. The sacrificing layer may reduce or minimizedamage to the flexible substrate 100, or various devices and layers onthe flexible substrate 100, when the flexible substrate 100 is separatedfrom the supporting substrate 10. The sacrificing layer may includevarious materials. For example, the sacrificing layer may include aninorganic material layer including silicon, an organic material layerincluding an organic material, or a metal layer including a metal.

A thin-film transistor unit 200 may be disposed on the flexiblesubstrate 100. The thin-film transistor unit 200 may include a thin-filmtransistor 210 and insulation layers 220 and 230 (e.g., see FIG. 9). Thethin-film transistor unit 200 may be disposed in at least portions ofthe display area DA and the non-display area NDA of the flexiblesubstrate 100. The thin-film transistor unit 200 in the display area DAmay include various devices, such as a thin-film transistor and acapacitor for supplying electricity to a light-emitting device. Thethin-film transistor unit 200 in the non-display area NDA may includeone or more circuits and wires for controlling display of an image inthe display area DA. The thin-film transistor unit 200 may also includean insulation layer, which, for example, includes a plurality of organicencapsulation films 220 (e.g., see FIG. 9). The organic encapsulationfilm 220 may insulate electrodes from one another to constitute athin-film transistor.

A first dam 242 may be on the thin-film transistor unit 200 to define afirst area A1 in the display area DA of the flexible substrate 100 and asecond area A2 outside the first area A1. The first area A1 may be anarea inside the first dam 242, in which at least a portion of theflexible substrate 100 and at least a portion of the thin-filmtransistor unit 200 are removed by laser-cutting.

A second dam 244 may be on the thin-film transistor unit 200 and maysurround the edges of the thin-film transistor unit 200. The second dam244 may serve as a partitioning wall for preventing an organicencapsulation layer 420 of an encapsulator 400 (e.g., as describedbelow) from flowing to outside of the flexible substrate 100.

The first dam 242 may also serve as a partitioning wall to prevent theorganic encapsulation layer 420 of the encapsulator 400 from flowinginto the first area A1. The first dam 242 and the second dam 244 mayinclude a same material. For example, the first dam 242 and the seconddam 244 may include a same material as the pixel defining film 240. Thefirst dam 242, the second dam 244, and the pixel defining film 240 maybe disposed, for example, in the same process.

A third area A3 may be between the first dam 242 and the second dam 244.The third area A3 may be a light-emitting unit which includes lightemitting devices, e.g., organic light-emitting devices.

Referring to FIG. 9, a pixel electrode 310 may be disposed on thethin-film transistor unit 200 before the first dam 242 and the seconddam 244 are disposed. After the pixel electrode 310 is disposed, a pixeldefining film may be disposed to cover the edges of the pixel electrode310 and expose the center portion of the pixel electrode 310. Therefore,the first dam 242 and the second dam 244 may be disposed in the sameprocess with the pixel defining film 240, and may be disposed on thethin-film transistor unit 200 after the pixel electrode 310 is firstdisposed.

FIGS. 2A and 2B illustrate plan and cross-sectional views of anadditional operation in the embodiment of a process for manufacturing adisplay apparatus.

Referring to FIGS. 2A and 2B, the additional operation may include alaser-cutting operation for the flexible substrate 100 and the thin-filmtransistor unit 200 on the supporting substrate 10. As described above,the flexible substrate 100 has the display area DA and the non-displayarea NDA, and the display area DA may include the second area A2adjacent to the first area A1 with a certain interval therebetween. Atthis time, the first dam 242 may surround the second area A2. Thelaser-cutting operation may cut the thin-film transistor unit 200 andthe flexible substrate 100 along the first area A1 by irradiating afirst laser beam L1. The second area A2 is therefore between a surfacecut by the laser-cutting operation and the first dam 242.

The laser-cutting operation for the flexible substrate 100 and thethin-film transistor unit 200 may include formation of a firstpenetrating portion 100 a in the flexible substrate 100 and formation ofa second penetrating portion 200 a in the thin-film transistor unit 200.According to the present embodiment, the laser beam L1 is irradiated ina direction from the thin-film transistor unit 200. As a result, thefirst penetrating portion 100 a is formed in the flexible substrate 100after the second penetrating portion 200 a is formed in the thin-filmtransistor unit 200. In one embodiment, when the laser beam L1 isirradiated in a direction from the supporting substrate 10, the secondpenetrating portion 200 a may be formed in the thin-film transistor unit200 after the first penetrating portion 100 a is formed in the flexiblesubstrate 100.

According to the present embodiment, the first penetrating portion 100 aand the second penetrating portion 200 a may have a same inner surface.This is because the first penetrating portion 100 a and the secondpenetrating portion 200 a may be formed in a same laser-cuttingoperation, for example, as described above.

A dummy portion DM may be on the first area A1 with the laser-cutportions as a boundary. The dummy portion DM may include at least aportion of the flexible substrate 100 and at least a portion of thethin-film transistor unit 200. According to the present embodiment, thefirst area A1 and the second area A2 are circular areas and the dummyportion DM is also formed to have a circular shape. In anotherembodiment, the first area A1 and the second area A2 may have variousother or different shapes.

FIGS. 3A and 3B illustrate plan and cross-sectional views of anadditional operation of the embodiment of a process for manufacturing adisplay apparatus.

Referring to FIGS. 3A, 3B and 9, the additional operation may includedisposing a light-emitting unit 300 and an encapsulator 400 on thethin-film transistor unit 200. The light-emitting unit 300 may include apixel electrode 310, an intermediate layer including an emission layer320, and a counter electrode 330. FIGS. 3A, 3B and 9 show that only theemission layer 320 and the pixel electrode 310 are disposed on thethin-film transistor unit 200 before the counter electrode 330 isdisposed. Also, a pixel defining film 240 may be disposed to define alight-emitting unit by covering the edges of the pixel electrode 310 andexposing the center portion of the pixel electrode 310. The emissionlayer 320 may then be disposed on the pixel electrode 310 (e.g., seeFIG. 9). The counter electrode 330 may be disposed on the front surfaceof the thin-film transistor unit 200 to cover the emission layer 320.Thus, in one embodiment, the counter electrode 330 may be integrallydisposed on the thin-film transistor unit 200, unlike the pixelelectrode 310, which is patterned for each pixel.

According to the present embodiment, at least a portion of the counterelectrode 330 may be disposed on the first dam 242. FIGS. 3A and 3B showthat a portion of the counter electrode 330 is located only on the firstdam 242. In one embodiment, at least a portion of the counter electrode330 may also be located on the second dam 244.

After the counter electrode 330 is disposed, the encapsulator 400 may bedisposed on the counter electrode 330. The encapsulator 400 may includethe organic encapsulation layer 420 shown in FIG. 3B. Referring to FIG.9, the encapsulator 400 may be disposed, for example, by sequentiallystacking a first inorganic encapsulation layer 410, the organicencapsulation layer 420, and a second inorganic encapsulation layer 430.

According to the present embodiment, the organic encapsulation layer 420may be disposed between first dam 242 and second dam 244. The organicencapsulation layer 420 is between the first dam 242 and the second dam244, because the organic encapsulation layer 420 is prevented fromflowing to the outside by the first dam 242 and the second dam 244. Forexample, the first dam 242 and the second dam 244 serve as partitioningwalls to locate the organic encapsulation layer 420 between the firstdam 242 and the second dam 244.

At least a portion of the counter electrode 330 may be on the dummyportion DM in the first area A1. At least a portion of the counterelectrode 330 may also be on a portion of the supporting substrate 10exposed by the first penetrating portion 100 a and the secondpenetrating portion 200 a. This is because the counter electrode 330 isdisposed on the front surface of the thin-film transistor unit 200, asdescribed above.

FIGS. 4A and 4B illustrate plan and cross-sectional views of anadditional operation of the embodiment of a process for manufacturing adisplay apparatus.

Referring to FIGS. 4A and 4B, the additional operation includesattaching a top film 20 to the top of the encapsulator 400. The top film20 may be attached to protect the flexible substrate 100 and features onthe flexible substrate 100 during the manufacturing process. FIG. 4Bshows that the top film 20 is attached to contact the counter electrode330 on the first dam 242. In one embodiment, the encapsulator 400 may bedisposed on the counter electrode 330 and at least portions of the firstinorganic encapsulation layer 410 and the second inorganic encapsulationlayer 430 may be located on the counter electrode 330. Therefore, thetop film 20 may substantially contact the second inorganic encapsulationlayer 430.

A separate functional layer may be disposed on the second inorganicencapsulation layer 430. The top film 20 may substantially contact thefunctional layer.

FIGS. 5A and 5B illustrate plan and cross-sectional views of anadditional operation of the embodiment of a process for manufacturing adisplay apparatus.

Referring to FIGS. 5A and 5B, after the flexible substrate 100 isseparated from the supporting substrate 10, the additional operationincludes attaching a bottom film 30 to the bottom surface of theflexible substrate 100. The bottom film 30 may be a film that istemporarily attached for a cell-cutting process (to be described later)and may include a plastic material, such as but not limited topolyethylene naphthalate (PEN) and polyethyeleneterephthalate (PET).

Separation of the flexible substrate 100 from the supporting substrate10 may be performed using various methods used in semiconductormanufacturing. A sacrificing layer may be further interposed between thesupporting substrate 10 and the flexible substrate 100. Depending on thecharacteristics of the sacrificing layer, a method of irradiating alaser beam for separation or dissolving the sacrificing layer using themoisture or a solvent may be used.

FIGS. 6A and 6B illustrates plan and cross-sectional views of anadditional operation of the embodiment of a process for manufacturing adisplay apparatus.

Referring to FIGS. 6A and 6B, additional operation is a cell-cuttingoperation for the bottom film 30 and the flexible substrate 100. Thecell-cutting operation may be performed, for example, by irradiating alaser beam L2 along a cutting line. Through the cell-cutting operation,the bottom film 30, the flexible substrate 100, and at least a portionof the thin-film transistor unit 200 on the flexible substrate 100 maybe cut.

In order to prevent damage to the thin-film transistor unit 200 on theflexible substrate 100 during the cell-cutting operation, a cell-cuttingline may optionally be formed without the organic encapsulation film 220of the thin-film transistor unit 200.

FIGS. 7A and 7B illustrate plan and cross-sectional views of anotheroperation of the embodiment of a process for manufacturing a displayapparatus.

Referring to FIGS. 7A and 7B, after the bottom film 30 is removed fromthe flexible substrate 100, the additional operation includes attachinga protective film 40 to the bottom surface of the flexible substrate100. When the bottom film 30 is removed from the flexible substrate 100,the dummy portion DM in the first area A1 may be removed together withthe bottom film 30. Therefore, a penetrating hole H may be formed in thefirst area A1 of the flexible substrate 100. The penetrating hole H isin the display area DA and, for example, may be used for variousapplications by mounting a camera therein in a subsequent process or bybeing combined with other parts.

The protection film 40 protects the bottom surface of the flexiblesubstrate 100 having flexible characteristics. The durability of theflexible substrate 100 may be improved by attaching the protection film40 to the bottom surface. The protective film 40 may be provided with anadhesive layer. The protective film 40 may be attached to the flexiblesubstrate 100 via the adhesive layer. Examples of materials for theprotection film 40 include a polymer resin, such as polyethersulphone(PES), polyacrylate (PAR), polyetherimide (PEI), polyethyelenennapthalate (PEN), polyethyeleneterephthalate (PET), polyphenylenesulfide (PPS), polyallylate, polyimide (PI), polycarbonate (PC), andcellulose acetate propionate (CAP).

FIGS. 8A and 8B illustrate plan and cross-sectional views of anadditional operation of the process for manufacturing a displayapparatus according to an example embodiment.

Referring to FIGS. 8A and 8B, the additional operation includes removingthe top film 20. Therefore, a module for a display apparatus may bemanufactured in which the bottom film 30, the flexible substrate 100,the thin-film transistor unit 200, the light-emitting unit 300, and theencapsulator 400 are sequentially stacked.

FIG. 9 illustrates a cross-sectional view of an embodiment of thedisplay area DA of a display apparatus. Referring to FIG. 9, thethin-film transistor 210 includes a semiconductor layer 211 includingamorphous silicon, polycrystalline silicon, or an organic semiconductormaterial, a gate electrode 213, a source electrode 215 a, and a drainelectrode 215 b.

A gate insulation film 226 including an inorganic material (e.g.,silicon oxide, silicon nitride, and/or silicon oxynitride) may bebetween the semiconductor layer 211 and the gate electrode 213 to secureinsulation between the semiconductor layer 211 and the gate electrode213. An interlayer insulation film 228 including an inorganic material(e.g., silicon oxide, silicon nitride, and/or silicon oxynitride) may beon the gate electrode 213. The source electrode 215 a and the drainelectrode 215 b may be on the interlayer insulation film 228. Such aninsulating film including an inorganic material may be disposed, forexample, by chemical vapor deposition (CVD) or atomic layer deposition(ALD). The same also applies to embodiments described below andmodifications thereof.

A barrier layer 222 and a buffer layer 224 including an inorganicmaterial (e.g., silicon oxide, silicon nitride, and/or siliconoxynitride) may be between the thin-film transistor 210 and thesubstrate 100 having a structure as described above. The barrier layer222 and the buffer layer 224 may planarize the top surface of thesubstrate 100 and/or may prevent impurities from the flexible substrate100 from permeating into the semiconductor layer 211 of the thin-filmtransistor 210.

A planarizing layer 230 may be on the thin-film transistor 210. Forexample, when an organic light-emitting diode is on the thin-filmtransistor 210 as shown in FIG. 9, the planarizing layer 230 maysubstantially planarize the top of the passivation layer covering thethin-film transistor 210. The planarizing layer 230 may include, forexample, an organic material, e.g., acryl, benzocyclobutene (BCB), orhexamethyldisiloxane (HMDSO). The planarizing layer 230 is shown as asingle layer in FIG. 2, but the planarizing layer 230 may bemultilayered in another embodiment.

An intermediate layer may be on the planarizing layer 230 in the displayarea DA of the substrate 100. The intermediate layer may include thepixel electrode 310, the counter electrode 330, and the emission layer320 therebetween. The pixel electrode 310 is electrically connected tothe thin-film transistor 210, through the source electrode 215 a or thedrain electrode 215 b, through an opening in the planarizing layer 230as shown in FIG. 9.

The pixel defining film 240 may be on the planarizing layer 230 todefine a pixel by having openings corresponding to respectivesub-pixels, that is, an opening that exposes at least the center portionof the pixel electrode 310. Furthermore, as shown in FIG. 9, the pixeldefining film 240 increases the distance between the edge of the pixelelectrode 310 and the counter electrode 330 above the pixel electrode310, thereby preventing occurrence of an arc or the like at an edge ofthe pixel electrode 310. The pixel defining film 240 may include, forexample, an organic material, e.g., polyimide or hexamethyldisiloxane(HMDSO).

The intermediate layer of the organic light-emitting device may includea monomer or polymer material. When a monomer material is included, theintermediate layer may have a single-layer structure or a compositestructure in which a hole injection layer (HIL), a hole transport layer(HTL), the emission layer (EML) 320, an electron transport layer (ETL),and/or an electron injection layer (EIL) are stacked. The intermediatelayer may include various organic materials, e.g., copper phthalocyanine(CuPc), N,N′-Di (naphthalen-1-yl) (NPB), and tris-8-hydroxyquinolinealuminum (Alq3). These layers may be arranged using, for example, avacuum deposition method.

When the intermediate layer includes a polymer material, theintermediate layer may have a structure including a HTL and the EML 320.In one embodiment, the hole transport layer may include PEDOT, and theemission layer 320 may include a polymer material such aspoly-phenylenevinylene (PPV) and polyfluorene. Such an intermediatelayer may be arranged using a screen printing method, an inkjet printingmethod, a laser induced thermal imaging (LITI) method, or anothermethod.

The intermediate layer may have a different structure and/or differentmaterials in another embodiment. Furthermore, the intermediate layer mayinclude a single layer over a plurality of pixel electrodes 310 or mayinclude layers patterned to respectively correspond to the plurality ofpixel electrodes 310.

The counter electrode 330 is on and may cover the display area DA, asshown in FIG. 9. In one embodiment, the counter electrode 330 may beintegrally disposed as a single component with respect to a plurality oforganic light-emitting devices and may correspond to the plurality ofpixel electrodes 310.

The organic light-emitting device may be easily damaged by moisture oroxygen from the outside. The encapsulator 400 may cover and protect theorganic light-emitting device from the moisture and oxygen. Theencapsulator 400 covers the display area DA and may extend to theoutside the display area DA. The encapsulator 400 may include the firstinorganic encapsulation layer 410, the organic encapsulation layer 420,and the second inorganic encapsulation layer 430 as shown in FIG. 9.

The first inorganic encapsulation layer 410 covers the counter electrode330 and may include, for example, silicon oxide, silicon nitride, and/orsilicon oxynitride. One or more optional layers (e.g., a capping layer)may be between the first inorganic encapsulation layer 410 and thecounter electrode 330.

Since the first inorganic encapsulation layer 410 is along theunderlying structure, the top surface of the first inorganicencapsulation layer 410 may not be flat as shown in FIG. 9. The organicencapsulation layer 420 covers the first inorganic encapsulation layer410. Unlike the first inorganic encapsulation layer 410, the organicencapsulation layer 420 may have a substantially flat top surface. Forexample, the organic encapsulation layer 420 may have a substantiallyflat top surface at a portion corresponding to the display area DA. Theorganic encapsulation layer 420 may include one or more materialsincluding but not limited to polyethylene terephthalate, polyethylenenaphthalate, polycarbonate, polyimide, polyethylene sulfonate,polyoxymethylene, polyarylate, and/or hexamethyldisiloxane.

The second inorganic encapsulation layer 430 covers the organicencapsulation layer 420 and, for example, may include silicon oxide,silicon nitride, and/or silicon oxynitride. The second inorganicencapsulation layer 430 may contact the first inorganic encapsulationlayer 410 at an edge of second inorganic encapsulation layer 430 outsidethe display area DA, thereby preventing the organic encapsulation layer420 from being exposed to the outside.

As previously described, because the encapsulator 400 includes the firstinorganic encapsulation layer 410, the organic encapsulation layer 420,and the second inorganic encapsulation layer 430, the multilayeredstructure may prevent any cracks that form in the encapsulator 400 frombeing connected to one another between the first inorganic encapsulationlayer 410 and the organic encapsulation layer 420 or between the organicencapsulation layer 420 and the second inorganic encapsulation layer430. As a result, formation of a path through which moisture or oxygenfrom the outside penetrates into the display area DA may be prevented,reduced, or minimized. A polarizing plate may be disposed on theencapsulator 400, for example, by an optically clear adhesive (OCA). Thepolarizing plate may reduce reflection of external light. For example,when external light passes through the polarizing plate, reflects fromthe top surface of the counter electrode 330, and passes through thepolarizing plate again, the phase of the external light may be changedas a result of passing through the polarizer twice. Because the phase ofthe reflected light is different from the phase of the external lightincident to the polarizing plate, destructive interference occurs.Therefore, visibility may be improved as external light reflection isreduced. According to another example embodiment, a black matrix and acolor filter without a polarizing plate may be used to reduce reflectionof external light in the display apparatus.

Touch electrodes may arranged in various patterns on the encapsulator400 in order to provide a touch screen function.

The inorganic material, the buffer layer 224, the gate insulation film226, and the interlayer insulation film 228 of the barrier layer 222 maybe collectively referred to as an inorganic insulator 110. The inorganicinsulator 110 may extend from the display area DA toward the non-displayarea NDA to the edge of the flexible substrate 100, as shown in FIG. 9.

FIG. 10 illustrates a cross-sectional view of a portion of a displayapparatus around the penetrating hole H according to an exampleembodiment.

Referring to FIG. 10, at least one fine hole 220 a may be formed in theorganic encapsulation film 220 in the second area A2 of the flexiblesubstrate 100. As described above, the intermediate layer of thelight-emitting unit 300 may include the EML 320 and, in some cases,common layers 322. Unlike the EML 320, the common layers 322 may be onthe front surface of the flexible substrate 100. Therefore, the organicencapsulation film 220 on the second area A2 may have the at least onefine hole 220 a to prevent the common layer 322 from continuing to theedge where the penetrating hole H is located.

The counter electrode 330 may be on the flexible substrate 100 on thecommon layer 322, and the first inorganic encapsulation layer 410 andthe second inorganic encapsulation layer 430 may be on the counterelectrode 330. The first inorganic encapsulation layer 410 and thesecond inorganic encapsulation layer 430 may extend to the edge of thepenetrating hole H. In this case, the first inorganic encapsulationlayer 410 and the second inorganic encapsulation layer 430 may preventmoisture or oxygen from permeating into the display area DA from theoutside. The first inorganic encapsulation layer 410 and the secondinorganic encapsulation layer 430 may cover the fine hole 220 a and becontinuous. In one embodiment, the size of the fine hole 220 a may beless than twice the thickness of the first inorganic encapsulation layer410 or the second inorganic encapsulation layer 430.

Due to the structure of the fine hole 220 a, the common layer 322 may bediscontinuous in the second area A2, whereas the first inorganicencapsulation layer 410 and the second inorganic encapsulation layer 430may be continuously disposed.

In accordance with one or more of the aforementioned embodiments, adisplay apparatus may have a penetrating hole H in a display area DA. Inorder to form such the penetrating hole H, a two-stage laser-cuttingtechnique may be used. The penetrating hole H may be formed in thedisplay area DA using a fine metal mask (FMM) of a type used formanufacturing a display apparatus, e.g., without using a specializedfine metal mask. As a result, manufacturing costs may be reduced.Therefore, a design that is difficult to be manufacture using a FMM or adesign like the penetrating hole H may be freely manufactured.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of skill in the art as of thefiling of the present application, features, characteristics, and/orelements described in connection with a particular embodiment may beused singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwiseindicated. Accordingly, various changes in form and details may be madewithout departing from the spirit and scope of the embodiments set forthin the claims.

What is claimed is:
 1. A display apparatus, comprising: a substrateincluding a display area having a first area, a peripheral area adjacentto the display area, and a penetrating hole corresponding to the firstarea; a buffer layer including an inorganic material in the displayarea; a semiconductor layer on the buffer layer; a gate insulation filmon the semiconductor layer; a gate electrode overlapping at least a partof the semiconductor layer and disposed on the gate insulation film; aninterlayer insulation film on the gate electrode; an electrode layer onthe interlayer insulation film, the electrode layer connected to thesemiconductor layer through a contact hole; a pixel electrodeelectrically connected to the electrode layer, an intermediate layer onthe pixel electrode, and a counter electrode on the intermediate layer;at least two fine grooves that each extend below the gate insulationfilm in a second area, the second area surrounding the first area; and afine dam between the at least two fine grooves, wherein at least aportion of the intermediate layer is disposed in the at least two finegrooves.
 2. The display apparatus as claimed in claim 1, wherein atleast a portion of a common layer is disposed in each of the at leasttwo fine grooves.
 3. The display apparatus as claimed in claim 1,further comprising: an encapsulator on the counter electrode, theencapsulator including an organic encapsulation layer interposed betweena first inorganic encapsulation layer and a second inorganicencapsulation layer, wherein at least a portion of the first inorganicencapsulation layer is disposed in each of the at least two finegrooves.
 4. The display apparatus as claimed in claim 3, wherein atleast a portion of the second inorganic encapsulation layer is embeddedin each of at least two fine grooves.
 5. The display apparatus asclaimed in claim 1, further comprising: a planarizing layer above theelectrode layer; and a first dam on the planarizing layer andsurrounding the penetrating hole.
 6. The display apparatus as claimed inclaim 5, further comprising: a pixel defining film that defines a pixelarea by exposing a center portion of the pixel electrode and covering anedge of the pixel electrode, wherein the first dam includes a samematerial as the pixel defining film.
 7. The display apparatus as claimedin claim 5, wherein the first dam is spaced apart from the penetratinghole by a predetermined distance.
 8. The display apparatus as claimed inclaim 5, further comprising: a second dam in the peripheral area.
 9. Thedisplay apparatus as claimed in claim 8, further comprising: anencapsulator on the counter electrode, the encapsulator including anorganic encapsulation layer, wherein the organic encapsulation layer isbetween the first dam and the second dam.
 10. The display apparatus asclaimed in claim 8, wherein the first dam and the second dam include asame material as the pixel defining film.
 11. The display apparatus asclaimed in claim 8, wherein at least a portion of the counter electrodeis on the first dam.
 12. The display apparatus as claimed in claim 1,wherein each of the at least two fine grooves extend below the bufferlayer such that at least one side surface of the fine dam includes partof each of the buffer layer, the gate insulation film, and theinterlayer insulation film.